Interface structure and composition of MoO3/GaAs(0 0 1)
نویسندگان
چکیده
منابع مشابه
Interface structure and composition of MoO3/GaAs(0 0 1).
We studied growth, structure, stress, oxidation state as well as surface and interface structure and composition of thermally-evaporated thin MoO3 films on the technologically important III/V-semiconductor substrate GaAs(0 0 1). The MoO3 films grow with Mo in the 6+ oxidation state. The electrical resistance is tunable by the oxygen partial pressure during deposition from transparent insulatin...
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ژورنال
عنوان ژورنال: Journal of Physics: Condensed Matter
سال: 2018
ISSN: 0953-8984,1361-648X
DOI: 10.1088/1361-648x/aab391